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| | Germanium telluride Basic information |
| Product Name: | Germanium telluride | | Synonyms: | GERMANIUM (II) TELLURIDE;GERMANIUM TELLURIDE;Germanium telluride(GeTe GeTe);Germanium(II) telluride, pieces 6mm & down 99.999%;Germanium(II) telluride lump;Germanium(II) telluride, 99.999%, trace metals basis;GERMANIUM(II) TELLURIDE 99.999%;Germanium telluride, 99.999% | | CAS: | 12025-39-7 | | MF: | GeTe | | MW: | 200.24 | | EINECS: | 234-706-7 | | Product Categories: | | | Mol File: | 12025-39-7.mol |  |
| | Germanium telluride Chemical Properties |
| Melting point | 725 °C(lit.) | | density | 6.14 g/mL at 25 °C(lit.) | | form | Powder | | color | Black | | Specific Gravity | 6.2 | | Water Solubility | Insoluble in water. | | Crystal Structure | Cubic, Halite Structure - Space Group Fm3m | | Exposure limits | ACGIH: TWA 0.1 mg/m3
NIOSH: IDLH 25 mg/m3; TWA 0.1 mg/m3 | | CAS DataBase Reference | 12025-39-7(CAS DataBase Reference) | | EPA Substance Registry System | Germanium telluride (GeTe) (12025-39-7) |
| Risk Statements | 22 | | Safety Statements | 36 | | WGK Germany | 3 | | TSCA | Yes | | HS Code | 2842901090 |
| | Germanium telluride Usage And Synthesis |
| Chemical Properties | Germanium telluride (GeTe) is an efficient semiconductor of germanium and tellurium and is a phase-change material. It is known to exhibit four different structural states: three at room-temperature (one amorphous and two crystalline, α and γ) and one at high temperature (crystalline, β ). It shows semimetallic conduction and ferroelectric behaviour. | | Uses | Germanium telluride (GeTe) is a promising material for thermoelectric applications. Nanostructuring; non-stoichiometric defects; doping and alloying with other materials further enhances its thermoelectric performance.
GeTe is also an important semiconductor material prototypical phase change material of high interest for applications in optical and electronic non-volatile memories. | | Application | Germanium telluride is a promising thermoelectric compound with uses in doping, alloying, and nanostructuring, non-stoichiometric defects. It is also an important semiconductor that can act as a low temperature superconductor when doped. GeTe is also an important semiconductor material prototypical phase change material of high interest for applications in optical and electronic non-volatile memories. | | Preparation | Germanium telluride is produced by heating Ge (less resistivity) and Te (99.998%) to their melting points in an evacuated quartz tube. single crystals can be obtained using the zone melting method. | | General Description | This product has been enhanced for energy efficiency. |
| | Germanium telluride Preparation Products And Raw materials |
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