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| TANTALUM ETHOXIDE Chemical Properties |
Melting point | 21 °C(lit.) | Boiling point | 155 °C0.01 mm Hg(lit.) | density | 1.566 g/mL at 25 °C(lit.) | refractive index | n20/D 1.487(lit.) | Fp | 87 °F | storage temp. | 2-8°C | solubility | Soluble in organic solvents. | form | liquid | Specific Gravity | 1.56 | Water Solubility | Decomposes in water. Soluble in organic solvents. | Sensitive | Moisture Sensitive/Air Sensitive | Hydrolytic Sensitivity | 8: reacts rapidly with moisture, water, protic solvents | BRN | 3678999 | CAS DataBase Reference | 6074-84-6(CAS DataBase Reference) | EPA Substance Registry System | Ethanol, tantalum(5+) salt (6074-84-6) |
Hazard Codes | C,F | Risk Statements | 10-34 | Safety Statements | 16-26-36/37/39-45 | RIDADR | UN 2920 8/PG 2 | WGK Germany | 3 | F | 3-8-10-21 | TSCA | No | HazardClass | 3 | PackingGroup | III | HS Code | 2905190019 |
| TANTALUM ETHOXIDE Usage And Synthesis |
Description | Tantalum ethoxide can be used for the manufacture of tantalum (V) oxidethin-film materials using chemical vapor deposition, atomic layer deposition, and sol-gel processing. Those materials have applications in semiconductor, electrochromic and optical fields1,2,3. In research filed, it can be used for the synthesis of some novel compounds such as oxo-alkoxide-carboxylates like Ta4O4(OEt)8(OOCCH3)4 with special molecular structure2. It is also used to prepare tantalum oxide nanoparticles for the imaging cartilage4.
| Reference |
- Sukanya Murali, †, A. Anand Deshpande, and C. G. Takoudis. "Modeling of the Metalorganic Chemical Vapor Deposition of Tantalum Oxide from Tantalum Ethoxide and Oxygen." Industrial & Engineering Chemistry Research 44.16(2005): págs. 6387-6392.
- Dong, L. U., et al. "Synthesis Method and Application of Tantalum (Ⅴ) Ethoxide" Guangzhou Chemical Industry (2016).
- https://www.alfa.com/en/catalog/014643/
| Chemical Properties | clear colorless to almost colorless liquid or | Uses | Tantalum(V) ethoxide precursor is used to deposit ultra thin films of Tantalum oxide and other tantalum containing films by atomic layer deposition and chemical vapor deposition methods | Uses | Tantalum(V) ethoxide acts as a precursor used in the preparation of ultra thin films of tantalum oxide and other tantalum containing films, which finds application in semiconductors. It is also used to prepare tantalum oxide nanoparticles for the imaging cartilage. | General Description | Tantalum(V) ethoxide Ta(OC2H5)5 is a tantalum alkoxide that can be used as a precursor in the preparation of tantalum oxide by chemical vapor deposition (CVD). It has excellent volatility and thermal stability. It can be synthesized by anodic oxidation of tantalum plate in anhydrous ethanol. | Purification Methods | Purify it by distillation under reduced pressure. It aggregates in *C6H6,EtOH, MeCN, pyridine and diisopropyl ether. [Bradley et al. J Chem Soc 726 1955, Bradley et al. J Chem Soc 5 1956, Beilstein 1 IV 1312.] |
| TANTALUM ETHOXIDE Preparation Products And Raw materials |
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