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| DIETHYLSILANE Chemical Properties |
Melting point | -132°C | Boiling point | 56 °C (lit.) | density | 0.681 g/mL at 25 °C (lit.) | refractive index | n20/D 1.391(lit.) | Fp | −20 °F | storage temp. | under inert gas (nitrogen or Argon) at 2-8°C | solubility | Miscible with terahydrofuran, diethyl ether, 1,4-dioxane and benzene. | form | liquid | Specific Gravity | 0.683 | Sensitive | Air Sensitive | Hydrolytic Sensitivity | 3: reacts with aqueous base | Merck | 14,3128 | BRN | 1730902 | CAS DataBase Reference | 542-91-6(CAS DataBase Reference) | EPA Substance Registry System | Silane, diethyl- (542-91-6) |
Hazard Codes | F | Risk Statements | 11 | Safety Statements | 16-23-24/25 | RIDADR | UN 1993 3/PG 2 | WGK Germany | 1 | TSCA | Yes | HazardClass | 3 | PackingGroup | II |
| DIETHYLSILANE Usage And Synthesis |
Description | Diethylsilane is a reagent used in the chemical vapor deposition of SiO2 for microelectronics. It is also used as a precursor to prepare (3-allylsulfanyl-propyl)-diethyl-silane by using (Ph3P)3RhCl as reagent. It can also be used as a reductant in catalytic reduction of secondary amides to imines and secondary amines has been achieved using readily available iridium catalysts such as [Ir(COE)2Cl]2. This system requires low catalyst loading and shows high efficiency and an appreciable level of functional group tolerance. As a reduction agent, it also be used to convert polycarboxylic acids into their corresponding alkanes.
| Sources | Levy, R. A., J. M. Grow, and G. S. Chakravarthy. "Low-pressure chemical vapor deposition of silicon dioxide using diethylsilane." Cheminform 24.28(1993):851-854.
https://www.alfa.com/en/catalog/L16468/
https://www.sigmaaldrich.com/catalog/product/aldrich/423815?lang=en®ion=US
https://pubs.acs.org/doi/full/10.1021/ja304547s#citing
Nimmagadda, Rama D., and C. Mcrae. Cheminform 37.35(2006):3505-3508.
| Uses | Diethylsilane is used as a precursor to prepare (3-allylsulfanyl-propyl)-diethyl-silane by using (Ph3P)3RhCl as reagent. It is also used in the chemical vapor deposition of SiO2 for microelectronics. | Application | Used in the ‘in-situ’ preparation of diborane and haloboranes. |
| DIETHYLSILANE Preparation Products And Raw materials |
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