|
| | Indium(III) antimonide Basic information |
| | Indium(III) antimonide Chemical Properties |
| Melting point | 535°C | | density | 5,76 g/cm3 | | form | crystal | | Specific Gravity | 5.76 | | color | black | | Water Solubility | Insoluble in water. | | Crystal Structure | Cubic, Sphalerite Structure - Space Group F(-4)3m | | Merck | 14,4948 | | Exposure limits | ACGIH: TWA 0.5 mg/m3; TWA 0.1 mg/m3
NIOSH: IDLH 50 mg/m3; TWA 0.5 mg/m3; TWA 0.1 mg/m3 | | CAS DataBase Reference | 1312-41-0(CAS DataBase Reference) | | EPA Substance Registry System | Antimony, compd. with indium (1:1) (1312-41-0) |
| Hazard Codes | Xn,N | | Risk Statements | 20/22-51/53 | | Safety Statements | 61 | | RIDADR | UN 1549 6.1/PG 3 | | WGK Germany | 2 | | RTECS | NL1105000 | | TSCA | Yes | | HazardClass | 6.1 | | PackingGroup | III | | HS Code | 2853909090 |
| | Indium(III) antimonide Usage And Synthesis |
| Chemical Properties | Crystalline solid. | | Physical properties | Black cubic crystal; zincblende structure; density 5.775 g/cm3; melts at525°C; density of melt 6.48 g/mL; dielectric constant 15.9; insoluble in water. | | Uses | Indium antimonide finds use in infrared detectors, including FLIR systems, thermal imaging cameras, infrared astronomy and in infrared homing missile guidance systems, in fast transistors. It is used in thermal image detectors using photo-electromagnetic detectors or photodiodes. | | Uses | Crystal structure: Zinc blende structure, cubic | | Uses | In semiconductor electronics. Grown p-n junctions(Indium(III) antimonide) have been made by doping a melt with an acceptor impurity such as zinc or cadmium, and dipping in an n-type crystal. Rate-grown junctions have also been made. Broad-area surface junctions have been produced by out-diffusing antimony in vacuum from the surface of an n-type crystal, producing a p-n junction just inside the surface. Also has photoconductive, photoelectromagnetic, and magnetoresistive properties. Useful as an infrared detector and filter, and in Hall effect devices.
| | Production Methods | Intermetallic semiconductors of indium are formed from
group III and group V elements, requiring very high purity
of the elements (0.1 ppm). | | Preparation | Indium antimonide may be synthesized from its elements by fusion of sto-ichiometric amounts of indium and antimony at elevated temperatures in anevacuated, sealed ampule. | | General Description | This product has been enhanced for energy efficiency. | | Hazard | See indium; antimony. |
| | Indium(III) antimonide Preparation Products And Raw materials |
|
