|
| INDIUM PHOSPHIDE Basic information |
| INDIUM PHOSPHIDE Chemical Properties |
Melting point | 1070°C | density | 4,787 g/cm3 | form | pieces | color | Black | Water Solubility | Insoluble in water. | Crystal Structure | Cubic, Sphalerite Structure - Space Group F(-4)3m | Merck | 14,4953 | Exposure limits | ACGIH: TWA 0.1 mg/m3 NIOSH: TWA 0.1 mg/m3 | CAS DataBase Reference | 22398-80-7(CAS DataBase Reference) | IARC | 2A (Vol. 86) 2006 | EPA Substance Registry System | Indium phosphide (InP) (22398-80-7) |
Hazard Codes | T | Safety Statements | 24/25-45-53 | RIDADR | 3288 | WGK Germany | 3 | RTECS | NL1800000 | TSCA | Yes | Hazardous Substances Data | 22398-80-7(Hazardous Substances Data) | Toxicity | mouse,LD,intraperitoneal,> 5gm/kg (5000mg/kg),ENDOCRINE: CHANGES IN SPLEEN WEIGHTLUNGS, THORAX, OR RESPIRATION: CHANGES IN LUNG WEIGHTBLOOD: "CHANGES IN SERUM COMPOSITION (E.G., TP, BILIRUBIN, CHOLESTEROL)",Journal of Occupational Health. Vol. 38, Pg. 6, 1996. |
| INDIUM PHOSPHIDE Usage And Synthesis |
Chemical Properties | black crystal(s); 6mm pieces and smaller with 99.999% purity; semiconductor; band gap, eV, 1.42 (0K) and 1.35 (300K); mobility (300K), cm2/(V·s), 4600 electrons and 150 holes; dielectric constant 12.4; effective mass 0.077 electrons and 0.64 holes [KIR82] [CER91] [STR93] | Uses | InP is used in high-power and high-frequency electronics because of its superior electron velocity. It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes. It is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices. | Uses | In electronics for research on semiconductors. | Flammability and Explosibility | Notclassified |
| INDIUM PHOSPHIDE Preparation Products And Raw materials |
|