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| | 2,4,6,8-TETRAMETHYLCYCLOTETRASILOXANE Basic information |
| Product Name: | 2,4,6,8-TETRAMETHYLCYCLOTETRASILOXANE | | Synonyms: | 2,4,6,8-tetramethylcyclotetrasiloxane,mixtureofisomers;Cyclotetrasiloxane, 2,4,6,8-tetramethyl-;Tetramethylcyclotetrasiloxane;2,4,6,8-TETRAMETHYLCYCLOTETRASILOXANE, 9 9.5+%;1,3,5,7-TETRAMETHYLCYCLOTETRASILOXANE (2% CHLOROSILANE STABILIZED);1,3,5,7-TETRAMETHYLCYCLOTETRASILOXANE 95+%;2,4,6,8-Tetramethylcyclotetrasiloxane, 95%, mixture of isomers;1,3,5,7-Tetramethyl-2,4,6,8-tetraoxa-1,3,5,7-tetrasilacyclooctane | | CAS: | 2370-88-9 | | MF: | C4H16O4Si4 | | MW: | 240.51 | | EINECS: | 219-137-4 | | Product Categories: | Siloxanes | | Mol File: | 2370-88-9.mol |  |
| | 2,4,6,8-TETRAMETHYLCYCLOTETRASILOXANE Chemical Properties |
| Melting point | −69 °C(lit.) | | Boiling point | 134 °C(lit.) | | density | 0.986 g/mL at 25 °C(lit.) | | vapor pressure | 0.05-479Pa at 20℃ | | refractive index | n20/D 1.387(lit.) | | Fp | 76 °F | | storage temp. | 2-8°C | | form | liquid | | Specific Gravity | 0.991 | | color | Colorless to Almost colorless | | Water Solubility | Miscible with most organic solvents. Immiscible with water. | | Sensitive | Moisture Sensitive | | Hydrolytic Sensitivity | 3: reacts with aqueous base | | BRN | 1787074 | | InChIKey | BQYPERTZJDZBIR-UHFFFAOYSA-N | | LogP | -2.4-5.54 at 25℃ | | CAS DataBase Reference | 2370-88-9(CAS DataBase Reference) | | EPA Substance Registry System | Cyclotetrasiloxane, 2,4,6,8-tetramethyl- (2370-88-9) |
| Hazard Codes | Xi | | Risk Statements | 10-36 | | Safety Statements | 16-26-36 | | RIDADR | UN 1993 3/PG 3 | | WGK Germany | 3 | | F | 10-21 | | TSCA | Yes | | HazardClass | 3 | | PackingGroup | III | | HS Code | 29319090 |
| | 2,4,6,8-TETRAMETHYLCYCLOTETRASILOXANE Usage And Synthesis |
| Description | 2, 4, 6, 8-TETRAMETHYLCYCLOTETRASILOXANE can be used as the precursor for the deposition of polysiloxane, cyclic siloxane, silicon dioxide, and gate dielectrics in thin-film transistors (TFT) (for example, for the preparation of ultralow dielectric constant pSiCOH film), and is a component of photochemically formed SiOX monolayers on TiO. It is a good impregnant of photoelectric material. It can be used for the manufacturing of modified siloxane with defined hydrogen content and chain quality.
| | Chemical Properties | Colorless or yellowish transparent liquid | | Uses | 2,4,6,8-Tetramethylcyclotetrasiloxane can occur addition reaction with unsaturated alkenes, so it’s utilized widely to synthesize variety functional reactive silicone fluids which is used to form silicone block copolymer, or used as crosslinker of vinyl addition silicone rubber.
Tetramethyl-cyclotetrasiloxane is a good impregnant of photoelectric material. It is used to manufacture of modified siloxane with defined hydrogen content and chain quantity. It is also used in production of silicone polymers and acts as a precursor for the deposition of polysiloxane, cyclic siloxane, silicon dioxide, oxycarbide thin films with low dielectric constant for microelectronics and semiconductors. | | Uses | 2, 4, 6, 8-Tetramethylcyclotetrasiloxane (TMCTS) is an important precursor for the deposition of polysiloxane, cyclic siloxane, silicon dioxide, oxycarbide thin films with low dielectric constant for microelectronics, semiconductors and other applications | | General Description | Atomic number of base material: 14 Silicon | | Flammability and Explosibility | Flammable | | References | https://www.alfa.com/zh-cn/catalog/L16642/
http://www.sigmaaldrich.com/catalog/product/aldrich/512990?lang=en®ion=US
Grill, A., and V. Patel. "Ultralow dielectric constant pSiCOH films prepared with tetramethylcyclotetrasiloxane as skeleton precursor." Journal of Applied Physics 104.2(2008):107.
Zhang, Jianming, D. S. Wavhal, and E. R. Fisher. "Mechanisms of SiO2 film deposition from tetramethylcyclotetrasiloxane, dimethyldimethoxysilane, and trimethylsilane plasmas." Journal of Vacuum Science & Technology A Vacuum Surfaces & Films 22.1(2004):201-213.
Fujino, Katsuhiro, et al. "Low-Temperature Atmospheric-Pressure Chemical Vapor Deposition, Using 2, 4, 6, 8-Tetramethylcyclotetrasiloxane and Ozone." Japanese Journal of Applied Physics 33. 4A (1994):2019-2024.
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| | 2,4,6,8-TETRAMETHYLCYCLOTETRASILOXANE Preparation Products And Raw materials |
| Raw materials | 2,4,6,8,10,12-HEXAMETHYLCYCLOHEXASILOXANE, 96-->PENTAMETHYLCYCLOPENTASILOXANE-->Diethyl ether-->Water | | Preparation Products | 2 4 6-TRIMETHYLCYCLOTRISILOXANE 99-->1,3-BIS(TRIMETHYLSILOXY)-1,3-DIMETHYLDISILOXANE-->1,1,1,3,5,5,5-Heptamethyltrisiloxane |
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